研究業績
Japanese Journal of Applied Physics 61, 062009 (2022)
Scintillation properties of Yb-doped Bi<sub>4</sub>Ge<sub>3</sub>O<sub>12</sub> single crystals emitting near-infrared luminescence
著者
<u>K. Okazaki</u>, H. Fukushima, D. Nakauchi, T. Kato, N. Kawaguchi, T. Yanagida
カテゴリ
査読付主著論文
Abstract
Yb-doped Bi4Ge3O12 (BGO) single crystals with different dopant concentrations were synthesized by the floating zone method, and the photoluminescence (PL) and scintillation properties in visible to near-infrared (NIR) wavelength ranges were evaluated. In PL and scintillation, a broad emission band was observed at 400–600 nm, which was ascribed to the electronic transitions of Bi3+. Furthermore, NIR emission bands due to Yb3+ were observed at 1000 nm. To evaluate scintillation detector properties, the relationship between emission intensity in NIR range and X-ray exposure dose rate was investigated. Among the present samples, 0.5 and 1% Yb-doped BGO showed good linearity in the dynamic range from 0.006 to 60 Gy/h.
